1997. 5. 13 1/2 semiconductor technical data 2n5400 epitaxial planar pnp transistor revision no : 0 general purpose application. high voltage application. features high collector breakdwon voltage : v cbo =-130v, v ceo =-120v low leakage current. : i cbo =-100na(max.) @v cb =-100v low saturation voltage : v ce(sat) =-0.5v(max.) @i c =-50ma, i b =-5ma low noise : nf=8db (max.) maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 3. collector 2. base + _ characteristic symbol rating unit collector-base voltage v cbo -130 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -600 ma base current i b -100 ma collector power dissipation (ta=25 1 ) p c 625 mw collector power dissipation (tc=25 1 ) p c 1.5 w junction temperature t j 150 1 storage temperature range t stg -55 150 1
1997. 5. 13 2/2 revision no : 0 electrical characteristics (ta=25 1 ) 2n5400 * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-100v, i e =0 - - -100 na v cb =-100v, i e =0, ta=100 1 - - -100 a emitter cut-off current i ebo v eb =-3v, i c =0 - - -50 na collector-base breakdown voltage v (br)cbo i c =-0.1ma, i e =0 -130 - - v collector-emitter breakdown voltage * v (br)ceo i c =-1ma, i b =0 -120 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a, i c =0 -5 - - v dc current gain * h fe (1) v ce =-5v, i c =-1ma 30 - - h fe (2) v ce =-5v, i c =-10ma 40 - 180 h fe (3) v ce =-5v, i c =-50ma 40 - - collector-emitter * saturation voltage v ce(sat) 1 i c =-10ma, i b =-1ma - - -0.2 v v ce(sat) 2 i c =-50ma, i b =-5ma - - -0.5 base-emitter * saturation voltage v be(sat) 1 i c =-10ma, i b =-1ma - - -1.0 v v be(sat) 2 i c =-50ma, i b =-5ma - - -1.0 transition frequency f t v ce =-10v, i c =-10ma, f=100mhz 100 - 400 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - - 6 pf small-signal current gain h fe v ce =-10v, i c =-1ma, f=1khz 30 - 200 noise figure nf v ce =-5v, i c =-250 a rg=1k u , f=10hz 15.7khz - - 8 db
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